MTS Electronic Design Engineer (Memory)
- 25万-40万/年
- 上海
- |
- 5年以上
- |
- 本科
- |
- 全职
职位诱惑: 年终奖金,五险一金,福利好,老板nice,免费班车,成长空间大,技术领先,交通补助
发布时间: 2019-06-10发布
职位描述
KEY RESPONSIBILITIES
· GPU MC/PHY feature and function bring up on post silicon.
· Develop and perform memory interface tuning to graphic memories on various AMD boards.
· Perform Signal Integrity analysis for memory issue debug.
· Optimize platform memory design rule.
· Support AMD customers memory related issues.
REQUIREMENTS
· MS with 3+ or BS with 5+ years’ experience in memory/high speed signal relative experience.
· Good English required – verbal and written
EXPERIENCE AND SKILLS
· Experience with ASIC memory controller/PHY or DRAM memories(GDDR, DDR, HBM).
· Good knowledge of high speed signal integrity theory and test methodology.
· Skillful to operate high bandwidth oscilloscope for high speed signal measuring and analyzing
· Experience in script languages such as Perl, Ruby or Python is preferred.
· Highly motivated and skillful at solving difficult technical problems.
· Good communication skills with AMD global teams.
· Knowledge of PC, CPU and graphics architectures.