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Advanced Micro Devices

MTS Electronic Design Engineer (Memory)

  • 25万-40万/年
  • 上海
  • |
  • 5年以上
  • |
  • 本科
  • |
  • 全职

职位诱惑: 年终奖金,五险一金,福利好,老板nice,免费班车,成长空间大,技术领先,交通补助

发布时间: 2019-06-10发布

职位描述

KEY RESPONSIBILITIES
·  GPU MC/PHY feature and function bring up on post silicon.
·  Develop and perform memory interface tuning to graphic memories on various AMD boards.
·  Perform Signal Integrity analysis for memory issue debug.
·  Optimize platform memory design rule.
·  Support AMD customers memory related issues.
 
REQUIREMENTS
·   MS with 3+ or BS with 5+ years’ experience in memory/high speed signal relative experience.
·   Good English required – verbal and written
 
EXPERIENCE AND SKILLS
·   Experience with ASIC memory controller/PHY or DRAM memories(GDDR, DDR, HBM).
·   Good knowledge of high speed signal integrity theory and test methodology.
·   Skillful to operate high bandwidth oscilloscope for high speed signal measuring and analyzing
·   Experience in script languages such as Perl, Ruby or Python is preferred.
·   Highly motivated and skillful at solving difficult technical problems.
·   Good communication skills with AMD global teams.
·   Knowledge of PC, CPU and graphics architectures.
 

职位发布者

vicky cai

HR

7天

简历处理用时

99%

简历及时处理率