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三安光电

EPITAXY DEVELOPMENT ENGINEER/SPECIALIST FOR GaN LEDs

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  • 我要分享
  • 40万-80万/年
  • 泉州
  • |
  • 工作经验不限
  • |
  • 本科
  • |
  • 全职

职位诱惑: 年终奖金,五险一金,福利好,技术领先,年度旅游,节日礼物

发布时间: 2022-04-27发布

职位描述

Responsibilities
-          Epitaxial development of novel processes and structures for GaN material system in MOCVD (Metal-organic Chemical Vapor Deposition) processes
-          Planning and evaluation of experiments and measurements
-          In-depth analysis of processes for crucial parameters on material components and properties
-          Sustainable and systematic development in improving efficiency , stability and electrical characteristics of epitaxial wafers
Who we are looking for
-          University degree in chemistry, physics, materials science or a comparable natural science degree
-          Several years of experience in research and development of novel structures and new process regimes of III-V semiconductors, preferably doctorate in the field of epitaxy and deep understanding of MOCVD processes
-          Theoretical knowledge of optoelectronic semiconductor
-          Analytical strengths & ability to solve technical problems and issues
-          Extraordinary ability for innovation of semiconductor device
 

职位发布者

李燕琴

HR

7天

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三安光电股份有限公司

三安光电

领域: 消费电子,通信网络,汽车电子

规模: 1000人以上

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工作地址:

南安市

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